RTX to develop ultra-wide bandgap semiconductors for DARPA
New class of materials offer improved conductivity and thermal management properties
During phase one of the contract, the Raytheon Advanced Technology team will develop diamond and aluminum nitride semiconductor films and their integration onto electronic devices. Phase two will focus on optimizing and maturing the diamond and aluminum nitride technology onto larger diameter wafers for sensor applications.
"This is a significant step forward that will once again revolutionize semiconductor technology," said
The unique material properties of UWBGS offer several advantages over traditional semiconductor technologies, enabling highly compact, ultra-high power radio frequency switches, limiters, and power amplifiers. Their high thermal conductivity also allows the ability to operate at higher temperatures and in more extreme environments.
The team's goal is to spearhead the development of these materials towards devices that are well suited for both existing and future radar and communication systems with extended capability and range, including cooperative sensing, electronic warfare, directed energy, and circuitry in high-speed weapon systems such as hypersonics.
Work on this contract is being conducted at the company's foundry in
About Raytheon
Raytheon, an RTX business, is a leading provider of defense solutions to help the
About RTX
With more than 185,000 global employees, RTX pushes the limits of technology and science to redefine how we connect and protect our world. Through industry-leading businesses – Collins Aerospace, Pratt & Whitney, and Raytheon – we are advancing aviation, engineering integrated defense systems, and developing next-generation technology solutions and manufacturing to help global customers address their most critical challenges. The company, with 2023 sales of
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View original content:https://www.prnewswire.com/news-releases/rtx-to-develop-ultra-wide-bandgap-semiconductors-for-darpa-302263228.html
SOURCE RTX
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