HexaTech Launches Optimized Nitrogen Face Aluminum Nitride Substrate Product
Product Targets Development of Power/RF Device Technologies
"N-polar electronic device structures, such as high electron mobility transistors (HEMTs), grown on N-polar AlN substrates, simultaneously benefit from the material properties of the underlying bulk AlN substrate, such as high electrical resistivity and thermal conductivity, as well as the advantages of N-polar heterostructures, which may improve the maximum power gain cut-off frequency," noted HexaTech senior scientist Dr.
As the world's leading commercial supplier of single crystal physical vapor transport (PVT)-grown AlN substrates, HexaTech is once again driving cutting-edge product capabilities to exceed the needs of its customers.
All of HexaTech's 2-inch diameter products are available now with standard lead times. For more information on HexaTech's technology and products, please visit www.hexatechinc.com, or contact HexaTech at [email protected].
About HexaTech
HexaTech, a wholly owned subsidiary of Stanley Electric,
Founded in 2001, the HexaTech team has successfully solved complex material science and engineering challenges to commercialize high quality bulk AlN for volume production. For additional company and product information, please visit us at www.hexatechinc.com.
About Stanley Electric
Stanley Electric is a global company headquartered in
Contact:
HexaTech, Inc.
+1 919 415 1495
[email protected]
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SOURCE HexaTech, Inc.
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