GIST Researchers Optimize the Performance of Novel Organic Electrochemical Transistors
The steady-state performance of OECTs can be optimized by using both molecular design and structural alignment together to reduce the energetic and microstructural disorders in the films. With this forethought, a group of researchers led by Professor
Talking to us about the rationale behind conducting this study,
The OECT device based on PDPP-4EG fabricated via spin casting showed optimal performance — a figure-of-merit value of 702 F V-1 cm-1 s-1, charge carrier mobility of 6.49 cm2 V-1 s-1, and a transconductance value of 137.1 S cm-1. The subthreshold swing values were as low as 7.1 V dec-1, and the number of interface trap states were only 1.3 x 1013 eV-1 cm-2. Furthermore, PDPP-4EG also exhibited the lowest degree of energetic disorder and well-developed crystalline domains with the least microstructural disorder.
Highlighting the long-term implications of this study,
Reference
Title of original paper: High-Performance Organic Electrochemical Transistors Achieved by Optimizing Structural and Energetic Ordering of Diketopyrrolopyrrole-Based Polymers
Journal: Advanced Materials
DOI: https://doi.org/10.1002/adma.202307402
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SOURCE Gwangju Institute of Science and Technology (GIST)
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