GIST Researchers Investigate Strange Transient Responses of Organic Electrochemical Transistors
Two novel 1,4-dithienylphenylene-based polymers were designed to explore peculiar transient behaviors of organic mixed ionic–electronic conductors
Now, however, an international team of researchers from
"OECTs are known to mimic the computing mechanisms of neurons and synapses in spiking neural networks (SNNs) and are thus considered promising," explains
To this end, the researchers first synthesized two new 1,4-dithienylphenylene (DTP)-based OMEICs, DTP-2T and DTP-P, with co-monomer units, 2,2'-bithiophene and phenylene, respectively. The polymers comprised the same ionic and electronic properties, but by manipulating the polymer backbone planarity, the researchers were able to control the dominant molecular orientation of the mixed conductor system.
The DTP polymer was then used to fabricate OECT devices, which were subjected to electrochemical analysis. Initially, the team found that both polymers showed similar electrochemical properties despite having different molecular orientations. They then changed the ion injection direction when there was a certain current/voltage during the analysis. They observed that ion injection direction relative to the molecular orientation affected the length of the ion drift pathway, which, due to an indirect correlation with ion mobility within the polymers, resulted in peculiar transient responses in OECT devices.
The findings of this study provide a unique perspective into the world of molecular orientation-dependent characteristics of OECT devices. "OECT-based SNN architectures are anticipated to replace current computing systems in the future by increasing computation speed and reducing energy consumption. Our findings are expected to facilitate the realization of SNN-based computing systems soon," concludes
Let us hope that this work paves the way for many exciting futuristic technologies!
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Reference
Title of original paper: Peculiar transient behaviors of organic electrochemical transistors governed by ion injection directionality
Journal: Nature Communications
DOI: https://doi.org/10.1038/s41467-023-42840-z
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SOURCE Gwangju Institute of Science and Technology (GIST)
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