GlobalFoundries releases 130nm SiGe platform for mobile and communication chips

GlobalFoundries (NASDAQ: GFS) announced the production release of its 130nm complementary Bi-CMOS platform, a silicon germanium technology for mobile devices, wireless infrastructure, and industrial applications.

The 130CBIC platform delivers NPN transistors exceeding 400 GHz ft/fmax and PNP transistors surpassing 200 GHz, according to the company's statement. The technology is manufactured at GlobalFoundries' Burlington, Vermont facility.

The platform targets applications including smartphone components, optical networking, satellite communications, and industrial IoT devices. For cellular phones, the technology enables low-noise amplifiers designed to reduce current consumption while maintaining performance levels.

"130CBIC represents a major milestone in our SiGe roadmap, setting a new benchmark for performance for the broad spectrum of high-growth markets that rely on advanced RF technologies for high-speed, energy-efficient connectivity," said Shankaran Janardhanan, senior vice president of GlobalFoundries' RF product line.

The platform supports mmWave industrial radar applications exceeding 100GHz and provides high-performance PNP transistors for datacenter applications requiring high gain-bandwidth at reduced power consumption.

GlobalFoundries made the technology available for prototyping through its GlobalShuttle multi-project wafer program, with shuttles scheduled through 2025 and 2026. RF reference designs are accessible through the company's GF Connect portal.

The announcement was made at GlobalFoundries' annual Technology Summit in California. The company describes the platform as its highest-performance silicon germanium technology to date.

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