Navitas Semiconductor (Nasdaq: NVTS) has been awarded the ALATTIS program by the U.S. Army to develop next-generation 10 kilovolt silicon carbide power semiconductor technology, according to a company press release.

The ALATTIS (Accelerated, Large-Area, 10 kV SiC IGBT) program is sponsored by the Army Research Laboratory, which operates under the U.S. Army Combat Capabilities Development Command. The program aims to develop and validate a domestic manufacturing process for 10 kV insulated-gate bipolar transistors and associated PiN diode technologies intended for use in mission-critical military systems.

The program is supported by the Joint Experimentation and Technology Accelerator. Navitas was selected following a competitive evaluation among U.S. silicon carbide technology companies.

Navitas' existing GeneSiC silicon carbide portfolio spans voltage ratings from 650 V to 6.5 kV. The ALATTIS program would extend the company's work into the 10 kV range, building on its trench-assisted planar MOSFET architecture.

"This program enables Navitas to extend its leadership beyond SiC MOSFETs by developing next-generation 10 kV SiC IGBTs built on our unique, patented trench-assisted planar architecture and integrated with advanced PiN diode technologies," said Siddarth Sundaresan, SVP and Chief Technology Officer at Navitas.

The company cited prior work in ultra-high-voltage SiC, including 6.5 kV SiC thyristors in 2010, 10–15 kV PiN diodes in 2012, and commercial release of 6.5 kV SiC MOSFETs in 2021.