Micron Technology (NASDAQ: MU) announced the demonstration of a 512GB DDR5 RDIMM, which the company claims is the first module of its kind, on multiple server platforms, according to a press release dated Sept. 15, 2026.

The module uses vertical interconnect packaging technology that stacks DRAM dies connected by through-silicon vias (TSVs). It is designed to reach speeds of up to 9,200 MT/s and can enable up to 12TB of DDR5 DRAM in a single 24-slot dual-socket server.

Micron states the 512GB module draws 16.0W, compared with 44.2W for four 128GB modules, representing a reduction in operating power of more than 60%. The company also claims the module can deliver up to 1.4 times higher performance on certain memory-bound analytics workloads compared with 256GB DDR5 configurations.

AMD and Intel are both actively validating the module for use in next-generation server platforms. Karin Eibschitz Segal, general manager of platform and system engineering in Intel's Data Center Group, said Intel is working with Micron to validate the module and help enable future server platforms. AMD's corporate vice president Amit Goel noted close engineering collaboration with Micron on compute and memory integration.

"A 512GB RDIMM enables multi-terabyte servers, supporting larger AI and database workloads, greater virtualization density and improved power efficiency, all within existing server footprints," said Raj Narasimhan, senior vice president and general manager of the Cloud Memory Business Unit at Micron.

Micron expects the 512GB RDIMM to enter volume production sometime in the second half of 2027.