GlobalFoundries (Nasdaq: GFS) and RAAAM Memory Technologies announced a collaboration to develop and qualify Gain-Cell RAM (GCRAM) technology on GlobalFoundries' FDX FD-SOI platform, according to a press release issued Sept. 2, 2026.

The two companies said they have completed a tape-out of a GCRAM test chip, which they describe as a key development milestone. The GCRAM bitcell was co-designed using what the companies call "pushed" design rules on the FDX platform, targeting a 40% memory area reduction and up to 60% power reduction compared to standard SRAM.

The companies plan to begin offering GCRAM design access to lead customers in early 2027.

"The successful tape-out of our GCRAM test vehicle on GF's FDX platform is a testament to the powerful synergy between RAAAM's memory innovations and GlobalFoundries' manufacturing excellence," said Robert Giterman, CEO and co-founder of RAAAM Memory Technologies.

Sudipto Bose, vice president of FD-SOI product management at GlobalFoundries, said the partnership is intended to enhance the company's IP offering for customers developing AI and other advanced applications.

NXP Semiconductors said it is evaluating the technology. Victor Wang, VP of front end innovation at NXP Semiconductors, said the projected area and power reductions "provide a clear path to increasing on-chip memory capacities, which is vital for reducing off-chip data movement."

RAAAM Memory Technologies is a fabless semiconductor IP company based in Petah Tikva, Israel. GlobalFoundries operates semiconductor manufacturing facilities across the U.S., Europe, and Asia.