Kioxia Corporation, a subsidiary of Kioxia Holdings Corporation, and Sandisk Corporation (Nasdaq: SNDK) have jointly announced a 9th-generation 2Tb QLC 3D flash memory technology, according to a company press release.

The new technology uses the companies' CMOS directly Bonded to Array (CBA) architecture, which manufactures CMOS and cell array wafers separately before bonding them together. The design delivers a NAND interface speed of 4.8Gb/s, which the companies say is a 33% improvement over their 8th-generation devices. The technology also features a 6-plane architecture that the companies say provides higher read and write bandwidth and improved power efficiency compared with the previous generation.

Hideshi Miyajima, Chief Technology Officer at Kioxia, said the approach "enables us to deliver high performance while keeping investment costs relatively low."

Alper Ilkbahar, Chief Technology Officer at Sandisk, said the 9th-generation technology "demonstrates the unique flexibility of CBA, to accelerate innovation by independently advancing CMOS and memory technologies."

The companies stated the technology is intended to support cloud and data-intensive storage applications. No production timeline or pricing information was disclosed in the announcement.