Alpha and Omega Semiconductor Limited (NASDAQ: AOSL) has introduced the AOPL66801, an 80V MOSFET in a half-bridge configuration housed in a DFN6x5 AmpStack packaging format, according to a company press release.

The package uses vertically stacked die technology, placing two MOSFETs — one high-side and one low-side — in a single DFN6x5 footprint. The company says this configuration increases power density and frees up printed circuit board space compared to using two separate DFN5x6 discrete MOSFET packages.

The AOPL66801 includes an optimized clip design for the switch node connecting the two MOSFETs, which the company says minimizes parasitic inductance and reduces phase-node voltage ringing and stress on the device. A Kelvin sense pin is included to maintain gate-voltage stability during switching.

The device has a maximum junction temperature of 175°C, a maximum on-resistance of 2.2 milliohms at VGS=10V for both the high-side and low-side MOSFETs, and a drain current rating of 304A for the high side and 215A for the low side.

"By designing the package for low source parasitic inductance, we've drastically reduced phase node ringing and MOSFET stress," said Peter H. Wilson, senior director of the MOSFET product line at AOS.

The AOPL66801 is available immediately in production quantities with a 16-week lead time. The unit price is $6.16 in 1,000-piece quantities.