Magnachip Semiconductor Corporation (NYSE: MX) has introduced two 6th-generation 600V Super Junction MOSFETs targeting AI server power supplies, EV charging systems and industrial power applications, according to a company statement.

The two new devices feature low RDS(ON) values of 36mΩ and 37mΩ, designed to reduce conduction losses and improve power conversion efficiency. Both integrate a Zener diode between the gate and source terminals to provide protection against electrostatic discharge. Magnachip also reduced the chip size compared to the previous generation.

One of the two devices, the MMTB60R037G6FZVRH, incorporates a Fast Recovery Body Diode intended to reduce reverse recovery losses in high-frequency power conversion systems. Both products are offered in a TOLL package with a Kelvin Source configuration, which Magnachip says reduces parasitic inductance and improves switching stability.

"Our new 6th-generation 600V SJ MOSFETs combine low on-resistance, enhanced switching characteristics and robust reliability features to help customers improve efficiency and power density in next-generation power designs," said Hyuk Woo, Chief Technology Officer of Magnachip.

According to market research firm Omdia, the discrete semiconductor market within computing and data storage applications is projected to grow from approximately $3.7 billion in 2025 to approximately $5.9 billion by 2030, a compound annual growth rate of approximately 9%.

Magnachip is headquartered in Seoul, South Korea, and designs and manufactures analog and mixed-signal power semiconductor solutions.