Navitas Semiconductor (NASDAQ: NVTS) announced the launch of its UHV-TO-247-4-ISO package designed for silicon carbide MOSFETs, according to a company statement.

The package features over 12 mm pin-to-pin creepage and greater than 6000 V integrated isolation for 1200 V to 3300 V GeneSiC SiC MOSFETs. The company states the package eliminates the need for external high-voltage isolation while providing thermal and electromagnetic interference performance improvements compared to standard non-isolated through-hole packages.

The package integrates an aluminum nitride substrate that offers high-voltage isolation exceeding 6000 V. A reflow-compatible thermal pad allows direct mounting to liquid- or air-cooled heat sinks, which the company claims reduces thermal resistance by up to 60% and increases power dissipation capability by up to 150%.

Paul Wheeler, VP and GM of the SiC Business Unit at Navitas, said the package "overcomes critical thermal and isolation challenges, delivering power module–class performance in a compact discrete form factor."

The package is available in multiple configurations across three voltage ratings. The 1200V models include part numbers G5R06MT12UIK with 6.5 mΩ resistance and G5R12MT12UIK with 12 mΩ resistance. The 2300V options are G4H11MT23UIK with 11.5 mΩ resistance and G4H23MT23UIK with 23 mΩ resistance. For 3300V applications, the company offers G4H22MT33UIK with 22.5 mΩ resistance and G4H45MT33UIK with 45 mΩ resistance.

The package maintains compatibility with the established high-voltage TO-247-4 form factor and lead geometry. Navitas indicated the package targets applications in grid-tied power conversion systems, solid-state transformers, battery energy storage systems, and renewable energy applications.

The package will be displayed at PCIM Europe 2026 in Nuremberg at booth #544, Hall 9.