Microchip Technology Inc. (NASDAQ: MCHP) announced the availability of its 3.3 kV HV-D3 mSiC power modules designed for solid-state transformers in AI data centers and high-voltage power applications.

The modules integrate 3.3 kV silicon carbide MOSFETs and Schottky diodes in a 62 mm package, enabling power delivery from medium-voltage grids directly to server racks. The products support 6 kV isolation and feature extended creepage distances for safe series connection in high-voltage operations.

According to the company, the modules use a silicon nitride substrate that provides thermal conductivity and power-cycling capability. The technology allows designers to reduce the number of series connected devices by approximately half compared to lower-voltage silicon carbide alternatives when interfacing to 13.8 kV or 34.5 kV grids.

"Our 3.3 kV HV-D3 mSiC power modules enable designers to reduce the number of series connected devices by roughly half versus lower-voltage SiC alternatives when interfacing to 13.8 kV or 34.5 kV grids," said Clayton Pillion, vice president of Microchip's high-power solutions business unit.

The modules are available in half-bridge and common-source configurations, with and without anti-parallel Schottky diodes, addressing applications in the 100-300A range. Beyond data centers, the modules target megawatt charging infrastructure, rail transportation auxiliary power supplies, medium-voltage motor drives, and industrial power systems.

The products are available for purchase in production quantities directly from Microchip or through authorized distributors. The company provides supporting documentation including application notes, design guides, and simulation models for development.

Microchip, headquartered in Chandler, Arizona, manufactures semiconductors for industrial, automotive, consumer, aerospace, defense, communications and computing markets.