Richardson Electronics, Ltd. (NASDAQ: RELL) announced a global strategic partnership with NoMIS Power to expand its silicon carbide power semiconductor portfolio. The collaboration will add SiC technologies spanning 1.2 kV to 10 kV, with focus on medium-voltage and high-voltage solutions at 3.3 kV and above.

The partnership targets applications in battery energy storage systems, renewable energy conversion, AI data center power infrastructure, high-voltage direct current interfaces, solid-state transformers, rail and heavy-duty transportation, industrial drives, aerospace and defense power systems, and marine power.

NoMIS Power brings silicon carbide device design expertise and advanced packaging capabilities to the partnership. The company's portfolio includes planar SiC MOSFET technology from 1.2 kV to 10 kV, hybrid and bi-directional devices, diodes, and power modules. It also offers high-resistance small-die SiC solutions for compact, high-voltage, low-current applications.

"Partnering with NoMIS Power enhances our ability to deliver innovative silicon carbide solutions to our global customer base," said Greg Peloquin, Executive Vice President and General Manager of Power & Microwave Technologies and Green Energy Solutions groups at Richardson Electronics.

Gehan Wanduragala, Chief Strategy & Commercial Officer of NoMIS Power, said the partnership aims to help customers transition from evaluation to design-in phases with enhanced application support.

The collaboration supports Richardson Electronics' strategy to help customers transition from silicon insulated gate bipolar transistor solutions to SiC-based architectures, which can provide lower switching losses, higher switching frequency, improved thermal performance, and greater power density.

NoMIS Power will exhibit at PCIM Europe 2026 in Nuremberg, Germany from June 9-11.