Magnachip Semiconductor Corporation (NYSE: MX) announced the launch of two new 8th-generation ultra low-resistance 12V MOSFETs designed for smartphone battery protection circuits. The products target next-generation smartphones requiring ultra-fast charging and energy efficiency.

The new MOSFETs achieve on-resistance below 1 milliohm and deliver a 48% reduction in specific on-resistance compared to the previous generation, along with a 185% improvement in current density. One product is currently in mass production and being supplied to a major global smartphone manufacturer, according to the company's press release.

The devices serve as main switching components in smartphone battery protection circuits, performing overcharge and over-discharge protection functions as well as charge and discharge current control. The MDWC12D013PERH model achieves more than a 50% improvement in on-resistance compared to Magnachip's 7th-generation device of the same size, resulting in temperature reduction of up to 10°C under identical test conditions.

The products incorporate a high-density trench cell structure and offer pin-to-pin compatibility with existing circuit designs. This allows manufacturers to reduce PCB footprint and the number of required components, potentially lowering production costs.

Magnachip plans to introduce 22V ultra low-resistance products within the year to expand its low-voltage MOSFET portfolio for mobile devices. The company will showcase these products at PCIM Europe 2026 in Nuremberg, Germany.

"Achieving low on-resistance and superior thermal performance within limited space is a key challenge in smartphone battery protection circuit design," said Hyuk Woo, CTO of Magnachip Semiconductor.