Coherent Corp. (NYSE: COHR) announced advancements in its silicon carbide epitaxy capabilities that enable power devices up to 10kV for AI datacenter and industrial power applications.

The company's new 150mm and 200mm thick epitaxy platforms support device architectures up to 10kV in production, with demonstrated capability extending beyond 10kV. The technology targets applications in renewable energy, rail systems, fast-charging infrastructure, and grid infrastructure.

"Next-generation datacenter power architectures and high-voltage industrial systems are key drivers for silicon carbide adoption," said Gary Ruland, Senior Vice President, Silicon Carbide LLC. "Our new thick epitaxy capability for multi-kilovolt SiC devices enables customers to achieve higher efficiency and power density in critical applications such as energy infrastructure, high-capacity uninterruptible power supplies, and advanced power distribution systems in AI datacenters."

The advancements allow customers to develop power conversion systems for multi-megawatt datacenters and industrial infrastructure. Silicon carbide technology enables higher efficiency and power density compared to traditional silicon-based power devices.

Coherent operates in more than 20 countries and serves datacenter, communications, and industrial markets. The company continues to expand its silicon carbide technology portfolio from substrates to epitaxy for industrial, automotive, and energy market applications.

The information is based on a company press release.