Investing.com -- Navitas Semiconductor (NASDAQ: NVTS) shares jumped 20% following the company's announcement of two new silicon carbide MOSFET packages designed for AI data centers and energy infrastructure applications.

The company launched a top-side cooled QDPAK and a low-profile TO-247-4L package using its 5th generation GeneSiC Trench-Assisted Planar SiC MOSFET technology platform. Both products feature 1200 V voltage ratings and are targeted at high-power density applications.

The 5th generation technology delivers 35% improvements in RDS,ON × QGD figure of merit and approximately 25% improvement in QGD/QGS ratio compared to previous generations. The technology includes a threshold voltage of greater than 3 V to prevent parasitic turn-on.

The QDPAK package features a 15 mm x 21 mm footprint with a height of 2.3 mm and enables heat dissipation through the top of the package. The design supports up to 1000 VRMS applications and includes 5 mm creepage distance.

The low-profile TO-247-4-LP package provides a reduced vertical footprint for applications where height is constrained, such as AI data center power supplies. The package includes asymmetrical leads designed to improve manufacturing tolerances.

Four initial products were announced with on-resistance values ranging from 6.5 mΩ to 12 mΩ, all rated at 1200 V. The products are available in both QDPAK and TO-247-4-LP packages.

Paul Wheeler, VP and GM of the SiC business unit at Navitas, said the new packages respond to customer demand for higher power density in limited space.