Fujitsu and University of Toronto Develop World's First Digitally-Processed Gigabit-Class High-Speed Transceiver Chip Feb 10, 2010 10:59AM

Kawasaki, Japan, Feb 10, 2010 - (ACN Newswire) - Fujitsu Laboratories Ltd. and the University of Toronto today announced their joint development of a new processing method for transceiver chips used in gigabit-class(1) high-speed data transmission over wirelines. The new technology employs digital circuitry to replace previously-required structures that used analog circuits. While analog processing require circuits that are adapted to the specifications of a signal being transmitted, such as transmission distance and amplitude, this new digital approach can perform these optimizations automatically, so that a single circuit could be used to accommodate a wide range of various wireline communications. Compared to conventional processing methods, this new digital-processing method makes it possible to shorten development periods by approximately half. It is anticipated that this new technology in the future could be applied to a variety of wireline communication applications, including 10 Gbps high-speed Ethernet in datacenters.

Details of this technology were presented at the IEEE International Solid-State Circuits Conference 2010 (ISSCC 2010) being held in San Francisco from February 7-11. (Presentation number: 8.7)

Background and Technological Challenges

File size data volumes for large photographic, audio, and video files are becoming increasingly larger, thus requiring a significant amount of bandwidth to transmit, leading to demand for ever-faster wireline data communications. Conventional transceiver chips rely on analog circuitry which needs to be optimized to accommodate specifications of the signal being transmitted - such as transmission distance and amplitude - and therefore require multiple transceiver chips to be designed in order to accommodate for various applications.

With a growing diversity of devices featuring high-speed data transmission, the need to optimize an existing technology for every new type of device or model has become a bottleneck in the development process. Efforts to develop transceiver chips within short development periods that can accommodate the wide range of different devices have been proven challenging.

Newly-developed Technology

Fujitsu Laboratories and the University of Toronto have developed a digital circuit-based transceiver chip. Featuring digital circuitry, the new transceiver chip can automatically optimize itself for a variety of high-speed communications circuits, thus significantly reducing development periods by approximately half compared with conventional methods.

This technology detects variations in the delay on the time axis of the input signal, caused during data transmission, and based on that can automatically adjust the timing it uses for judging whether an incoming signal is a 0 or 1 (Figure 1). Since variations in data transmissions increase along with faster transmission speeds, this new technology is essential for accurate data exchange. This is the world's first technology to achieve Gbps-class speeds without the use of analog circuitry elements, while offering fully-digital timing adjustments for signal-determination.

Results

As a world's first, by using digital circuitry-based high-speed transceiver technology, Fujitsu Laboratories and the University of Toronto's new technology makes it possible to reduce the design and development period for a gigabit-class transceiver chip by approximately one-half (1/2) compared with conventional methods. This suggests that transceiver chips for a wide range of communications devices could be offered in a timely manner.

Future Developments

Fujitsu Laboratories and the University of Toronto will continue with development of this technology to optimize the digital signal processing, to further reduce the transceiver's power consumption.

Glossary and Notes

1 Gigabit-class/Gigabits-per-second (Gbps):Gigabits-per-second (Gbps) expresses data rate and indicates how many gigabits can be transferred per second. 10 Gbps is 10 billion bits-per-second (10 billion bps) = 10,000 megabits-per-second (10,000 Mbps), and indicates that 10 billion bits of data can be transferred per second.

About University of Toronto

Established in 1827, the University of Toronto is Canada's largest university, recognized as a global leader in research and teaching. U of T's distinguished faculty, institutional record of groundbreaking scholarship and wealth of innovative academic opportunities continually attract outstanding students and academics from around the world. U of T is committed to providing a learning experience that benefits from both a scale almost unparalleled in North America and from the close-knit learning communities made possible through its college system and academic divisions. Located in and around Toronto, one of the world's most diverse regions, U of T's vibrant academic life is defined by a unique degree of cultural diversity in its learning community. The University is sustained environmentally by three green campuses, where renowned heritage buildings stand beside award-winning innovations in architectural design.

For more information: http://www.utoronto.ca/

About Fujitsu Ltd

Fujitsu is a leading provider of IT-based business solutions for the global marketplace. With approximately 160,000 employees supporting customers in 70 countries, Fujitsu combines a worldwide corps of systems and services experts with highly reliable computing and communications products and advanced microelectronics to deliver added value to customers. Headquartered in Tokyo, Fujitsu Limited (TSE: 6702) reported consolidated revenues of 4.6 trillion yen (US$47 billion) for the fiscal year ended March 31, 2009. For more information, please visit www.fujitsu.com.


Contact: Fujitsu Laboratories Ltd.
Design Solutions Lab.
Platform Technologies Lab.
Tel: +81-44-754-2635
E-mail:hsio_adc_pr@ml.labs.fujitsu.com

University of Toronto
Prof. Ali Sheikholeslami
Dept. of Electrical and Computer Engineering
Tel: +1(416)978-1681
E-mail:ali@eecg.utoronto.ca
Address: 10 King's College Road, Toronto, Ontario, M5S 3G4

Copyright 2010 ACN Newswire. All rights reserved.


Fujitsu and University of Toronto Develop High-Reliability Read-Method for Spin-Torque-Transfer MRAM Feb 10, 2010 10:54AM

Kawasaki, Japan, Feb 10, 2010 - (ACN Newswire) - Fujitsu Laboratories Limited and the University of Toronto today announced that they have jointly developed the world's first high-reliability read-method for use with spin-torque-transfer (STT) MRAM(1) that is insusceptible to erroneous writes. STT MRAM is regarded as a potential future form of non-volatile memory(2) that could be used as an alternative to flash memory. NOR flash memory that is embedded in microcontrollers widely used in mobile phones and other electronic devices is expected to reach the limits of its feasible miniaturization in the near future, which has led to the search for an alternative low-power non-volatile memory that will allow continued necessary miniaturization. By resolving one of the major obstacles to using STT MRAM, Fujitsu and the University of Toronto's new read-method marks a major step towards the practical implementation of STT MRAM as a necessary replacement for flash memory, in view of future requirements that will be necessary for compact and low-power electronic devices.

Details of this technology were presented at the IEEE International Solid-State Circuits Conference 2010 (ISSCC 2010) being held in San Francisco from February 7-11. (Presentation number: 14.1)

Background

Many electronic devices such as mobile phones or PDAs use microcontrollers with embedded flash memory, which allows onboard software to be rewritten. However, NOR flash memory used in such microcontrollers is nearing the physical limits of its miniaturization, which has led to research on various types of memory that could replace NOR flash memory.

STT MRAM, which uses magnetic materials as the memory storage element, is gaining attention as an emerging potential candidate to replace flash memory, as STT MRAM meets the needs for speed, low power consumption, and miniaturization that would make it a good candidate to replace flash memory.

Technological Challenges

STT MRAM uses memory storage elements that take advantage of the effect in which a current that is passed through a magnetic material - such as a magnetic tunnel junction (MTJ)(3) - reverses its direction of magnetization (Figure 1). Passing a current through the MTJ causes its direction of magnetization to switch between a parallel or anti-parallel state, which has the effect of switching between low resistance and high resistance. Because this can be used to represent the 1s and 0s of digital information, STT MRAM can be used as a non-volatile memory.

Reading STT MRAM involves applying a voltage to the MTJ to discover whether the MTJ offers high resistance to current ("1") or low ("0"). However, a relatively high voltage needs to be applied to the MTJ to correctly determine whether its resistance is high or low, and the current passed at this voltage leaves little difference between the read-current and the write-current. Any fluctuation in the electrical characteristics of individual MTJs could cause what was intended as a read-current, to have the effect of a write-current, thus reversing the direction of magnetization of the MTJ.

Newly-developed Technology

In a joint collaboration, Fujitsu Laboratories and the University of Toronto have developed an innovative circuit design (Figure 3) that for the first time resolves the issue of erroneous writes in STT MRAM during read operations.

The newly developed read-method uses a negative resistance(4) that is intermediate between the MTJ's high resistance and low resistance on a parallel circuit (Figure 4). If the MTJ is in a high-resistance state, this circuit exhibits negative-resistance characteristics. If the MTJ is in a low-resistance state, then it exhibits normal-resistance characteristics. These characteristics allow the resistance value to be read at lower voltages than before, suppressing the tendency of the read operation to reverse the direction of magnetization and avoiding the problem of erroneous write operations.

Results

The development of this new read circuit with negative resistance has resulted in STT MRAM that is insusceptible to erroneous writes caused by fluctuations in the electrical characteristics of the MTJs. It is anticipated that the STT MRAM used as miniaturized non-volatile memory would enable greater high-performance in mobile phones and other electronic devices.

Future Developments

Fujitsu Laboratories and the University of Toronto plan to continue with R&D related to STT MRAM to strive toward practical implementation, such as lowering write currents and developing process technologies for further miniaturization.

Glossary and Notes

1 Spin- Torque-Transfer MRAM:Spin-torque-transfer magnetoresistive (STT) random access memory. MRAM that uses the "spin-torque-transfer" effect to reverse the direction of magnetization of an element by passing current through it.

2 Non-volatile memory:Memory that persists even when electrical power is cut.

3 Magnetic tunnel junction (MJT):A tunnel junction that uses the magnetoresistive effect. Consists of a recording layer made of ferromagnetic material, an insulating film a few atoms thick, and a layer made of ferromagnetic material that will not change its direction of magnetization in the presence of a current.

4 Negative resistance:An element that has negative resistance value, in which its current decreases when voltage rises.

About University of Toronto

Established in 1827, the University of Toronto is Canada's largest university, recognized as a global leader in research and teaching. U of T's distinguished faculty, institutional record of groundbreaking scholarship and wealth of innovative academic opportunities continually attract outstanding students and academics from around the world. U of T is committed to providing a learning experience that benefits from both a scale almost unparalleled in North America and from the close-knit learning communities made possible through its college system and academic divisions. Located in and around Toronto, one of the world's most diverse regions, U of T's vibrant academic life is defined by a unique degree of cultural diversity in its learning community. The University is sustained environmentally by three green campuses, where renowned heritage buildings stand beside award-winning innovations in architectural design.

For more information: http://www.utoronto.ca/

About Fujitsu Ltd

Fujitsu is a leading provider of IT-based business solutions for the global marketplace. With approximately 160,000 employees supporting customers in 70 countries, Fujitsu combines a worldwide corps of systems and services experts with highly reliable computing and communications products and advanced microelectronics to deliver added value to customers. Headquartered in Tokyo, Fujitsu Limited (TSE: 6702) reported consolidated revenues of 4.6 trillion yen (US$47 billion) for the fiscal year ended March 31, 2009. For more information, please visit www.fujitsu.com.


Contact: Fujitsu Laboratories Ltd.
Technology Integration Lab.
Platform Technologies Lab.
Tel: +81(46)250-8379
E-mail:til-si@ml.labs.fujitsu.com

University of Toronto
Prof. Ali Sheikholeslami
Dept. of Electrical and Computer Engineering
Tel: +1(416)978-1681
E-mail:ali@eecg.utoronto.ca
Address: 10 King's College Road, Toronto, Ontario, M5S 3G4 Canada

Copyright 2010 ACN Newswire. All rights reserved.


Electrolux Delists from the London Stock Exchange Feb 10, 2010 09:22AM

STOCKHOLM--(BUSINESS WIRE)-- Regulatory News:

AB Electrolux (STO: ELUXA) (STO: ELUXB) (LSE: ELXB) B-share will be delisted from the Official List of the UK Listing Authority, UKLA, and the London Stock Exchange, LSE, effective of March 11, 2010. On December 16 last year, Electrolux communicated that the Board of Directors had decided to apply for such a delisting.

The Electrolux B-share has been listed on the LSE since 1928. The LSE listing has been a part in a strategy to increase international ownership in Electrolux. However, this listing is no longer deemed necessary due to deregulation of international capital markets and the increased foreign ownership of shares on Nasdaq OMX Stockholm. In recent years, trading of Electrolux shares on the LSE has been limited.

Following the delisting, all trading in Electrolux shares will be concentrated to Nasdaq OMX Nordic Market in Stockholm. Electrolux has also exited its other international listings in recent years, including those of Paris, Zurich and Geneva as well as New York's Nasdaq.

About the Electrolux Group

Electrolux is a global leader in home appliances and appliances for professional use, selling more than 40 million products to customers in 150 countries every year. The company focuses on innovations that are thoughtfully designed, based on extensive consumer insight, to meet the real needs of consumers and professionals. Electrolux products include refrigerators, dishwashers, washing machines, vacuum cleaners and cookers sold under esteemed brands such as Electrolux, AEG-Electrolux, Eureka and Frigidaire. In 2009, Electrolux had sales of SEK 109 billion and 51,000 employees. For more information, visit http://www.electrolux.com/press

Electrolux may be required to disclose the information provided herein pursuant to the Securities Market Act.

This information was brought to you by Cision http://www.cisionwire.com


    Source: Electrolux


AXMIN Exploration Agreement on the Satifara Permit, Mali and Shareholder Loan Granted Feb 10, 2010 09:21AM

TORONTO, ONTARIO -- (MARKET WIRE) -- 02/10/10 -- AXMIN Inc. (TSX VENTURE: AXM) is pleased to announce that it has concluded a Heads of Agreement ("Agreement") with Societe d'Exploration des Mines d'Or de Sadiola ("SEMOS"), a joint venture between IAMGOLD Corporation and AngloGold Ashanti that operates the Sadiola Mine in Mali, whereby SEMOS has the potential to earn 100% interest in the Satifara exploration permit, a joint venture between AXMIN (94.45%) and African Goldfield (Mali) Limited (5.55%). The Satifara permit is located 10 km west of the Sadiola Mine. To earn a 100% interest, SEMOS must spend a minimum of US$500,000 over a two year period and complete a NI 43-101 Mineral Resource calculation, making payment of US$15/oz for Measured and Indicated, US$5/oz for Inferred resources and US$15/oz for any ounce of gold mineral Reserve mined. The total payment to AXMIN is capped and will not exceed US$7,500,000.

President and CEO, Mario Caron comments "AXMIN is pleased to enter into an agreement with SEMOS on its Satifara project, considering the exploration expertise gained by SEMOS from the development of the Sadiola Mine and the aggressive exploration program set out in the agreement, we are encouraged that any positive results will ensure prompt resource definition."

The Satifara permit is located in the same geological trend and environment as the Birimian hosted, Sadiola Mine. To date exploration has located a 5 km long northwest-trending gold-in-soil geochemical anomaly that is 1.5 km wide in its northern part and 0.25 km wide in its southern part. Over the anomalous areas an infill (200 x 100 metre grid) geochemical survey was completed in conjunction with a number of trenches, one of which returned 3.4 g/t Au over 34 metres.

The terms of the Agreement with SEMOS include:


--  The Agreement grants SEMOS an Exclusive option for a period of 24
    months, Phase I and Phase II must be completed within a minimum 12 month
    period or the Agreement is terminated. Phase III must be completed
    within the remaining 12 month period or the Agreement is terminated:


    a.  Phase I - SEMOS must spend a minimum of US$250,000 on preliminary
        reconnaissance exploration over known gold anomalies, after
        completion SEMOS has the right to proceed to Phase II or terminate
        the Agreement.
    b.  Phase II - SEMOS must spend a minimum of US$250,000 on exploration
        drilling bringing the drill density to 100 x 25 metre over areas of
        interest, after completion SEMOS may elect to continue to Phase III
        or terminate the Agreement.
    c.  Phase III - SEMOS must carry out sufficient definition drilling over
        the area(s) of interest for resource definition purposes.


        i.  On completion of Phase III and within 60 days of the completion
            of the estimate SEMOS must pay AXMIN US$15/oz for each measured
            and indicated resource ounce defined and US$5/oz for each
            inferred resource ounce defined. On completion of payments,
            AXMIN will transfer 100% interest, and all associated rights, in
            the Satifara permit to SEMOS;
        ii. SEMOS must pay AXMIN US$15/oz for any ounce of gold mineral
            Reserve mined; and
        iii.Total payments to AXMIN is capped and will not exceed
            US$7,500,000.

Exploration will be fully managed by SEMOS during the Exclusive option period including all expenditures pertaining to exploration, administration, taxes and permit renewal fees. SEMOS will also provide AXMIN with quarterly technical and financial reports on the programs.

Shareholder Loan

AXMIN also announces that its major shareholder AOG Holdings BV ("AOG"), a wholly owned subsidiary of The Addax & Oryx Group Limited, has agreed to provide the Company with a second loan of Cdn$500.000. The loan bears interest at 9% and all principal and interest is repayable within 24 months of the date of the first advance. The terms of the loan are similar in all material aspects to those announced in the press release dated December 22, 2009. The loan proceeds will be used for working capital and general corporate purposes.

About AXMIN

AXMIN is a Canadian exploration and development company with a strong focus on central and west Africa. AXMIN's goal is to rapidly move its Passendro Gold Project, Central African Republic towards production. AXMIN is positioned to grow in value as it develops its project pipeline in parallel pursuing new opportunities to increase its asset base. For more information regarding AXMIN visit our website at www.axmininc.com.

This press release includes certain "Forward-Looking Statements." All statements, other than statements of historical fact, included herein, including without limitation, statements regarding potential mineralization and reserves, exploration results and future plans and objectives of AXMIN, are forward-looking statements that involve various risks and uncertainties. There can be no assurance that such statements will prove to be accurate and actual results and future events could differ materially from those anticipated in such statements. Important factors that could cause actual results to differ materially from AXMIN's expectations are disclosed under the heading "Risk Factors" and elsewhere in AXMIN documents filed from time-to-time with the TSX Venture and other regulatory authorities. AXMIN disclaims any intention or obligation to update or revise any forward-looking statements whether as a result of new information, future events or otherwise, except as required by applicable law.

Neither TSX Venture Exchange nor its Regulation Services Provider (as that term is defined in the policies of the TSX Venture Exchange) accepts responsibility for the adequacy or accuracy of this release.

Contacts:
AXMIN Inc.
Mario Caron
President & CEO
416 368 0993 ext 223

AXMIN Inc.
Judy Webster
Manager Investor Relations
416 368 0993 ext 221
ir@axmininc.com


AXMIN Exploration Agreement on the Satifara Permit, Mali and Shareholder Loan Granted Feb 10, 2010 09:21AM

TORONTO, ONTARIO--(Marketwire - Feb. 10, 2010) - AXMIN Inc. (TSX VENTURE: AXM) is pleased to announce that it has concluded a Heads of Agreement ("Agreement") with Societe d'Exploration des Mines d'Or de Sadiola ("SEMOS"), a joint venture between IAMGOLD Corporation and AngloGold Ashanti that operates the Sadiola Mine in Mali, whereby SEMOS has the potential to earn 100% interest in the Satifara exploration permit, a joint venture between AXMIN (94.45%) and African Goldfield (Mali) Limited (5.55%). The Satifara permit is located 10 km west of the Sadiola Mine. To earn a 100% interest, SEMOS must spend a minimum of US$500,000 over a two year period and complete a NI 43-101 Mineral Resource calculation, making payment of US$15/oz for Measured and Indicated, US$5/oz for Inferred resources and US$15/oz for any ounce of gold mineral Reserve mined. The total payment to AXMIN is capped and will not exceed US$7,500,000.

President and CEO, Mario Caron comments "AXMIN is pleased to enter into an agreement with SEMOS on its Satifara project, considering the exploration expertise gained by SEMOS from the development of the Sadiola Mine and the aggressive exploration program set out in the agreement, we are encouraged that any positive results will ensure prompt resource definition."

The Satifara permit is located in the same geological trend and environment as the Birimian hosted, Sadiola Mine. To date exploration has located a 5 km long northwest-trending gold-in-soil geochemical anomaly that is 1.5 km wide in its northern part and 0.25 km wide in its southern part. Over the anomalous areas an infill (200 x 100 metre grid) geochemical survey was completed in conjunction with a number of trenches, one of which returned 3.4 g/t Au over 34 metres.

The terms of the Agreement with SEMOS include:


--  The Agreement grants SEMOS an Exclusive option for a period of 24
    months, Phase I and Phase II must be completed within a minimum 12 month
    period or the Agreement is terminated. Phase III must be completed
    within the remaining 12 month period or the Agreement is terminated:


    a.  Phase I - SEMOS must spend a minimum of US$250,000 on preliminary
        reconnaissance exploration over known gold anomalies, after
        completion SEMOS has the right to proceed to Phase II or terminate
        the Agreement.
    b.  Phase II - SEMOS must spend a minimum of US$250,000 on exploration
        drilling bringing the drill density to 100 x 25 metre over areas of
        interest, after completion SEMOS may elect to continue to Phase III
        or terminate the Agreement.
    c.  Phase III - SEMOS must carry out sufficient definition drilling over
        the area(s) of interest for resource definition purposes.


        i.  On completion of Phase III and within 60 days of the completion
            of the estimate SEMOS must pay AXMIN US$15/oz for each measured
            and indicated resource ounce defined and US$5/oz for each
            inferred resource ounce defined. On completion of payments,
            AXMIN will transfer 100% interest, and all associated rights, in
            the Satifara permit to SEMOS;
        ii. SEMOS must pay AXMIN US$15/oz for any ounce of gold mineral
            Reserve mined; and
        iii.Total payments to AXMIN is capped and will not exceed
            US$7,500,000.

Exploration will be fully managed by SEMOS during the Exclusive option period including all expenditures pertaining to exploration, administration, taxes and permit renewal fees. SEMOS will also provide AXMIN with quarterly technical and financial reports on the programs.

Shareholder Loan

AXMIN also announces that its major shareholder AOG Holdings BV ("AOG"), a wholly owned subsidiary of The Addax & Oryx Group Limited, has agreed to provide the Company with a second loan of Cdn$500.000. The loan bears interest at 9% and all principal and interest is repayable within 24 months of the date of the first advance. The terms of the loan are similar in all material aspects to those announced in the press release dated December 22, 2009. The loan proceeds will be used for working capital and general corporate purposes.

About AXMIN

AXMIN is a Canadian exploration and development company with a strong focus on central and west Africa. AXMIN's goal is to rapidly move its Passendro Gold Project, Central African Republic towards production. AXMIN is positioned to grow in value as it develops its project pipeline in parallel pursuing new opportunities to increase its asset base. For more information regarding AXMIN visit our website at www.axmininc.com.

This press release includes certain "Forward-Looking Statements." All statements, other than statements of historical fact, included herein, including without limitation, statements regarding potential mineralization and reserves, exploration results and future plans and objectives of AXMIN, are forward-looking statements that involve various risks and uncertainties. There can be no assurance that such statements will prove to be accurate and actual results and future events could differ materially from those anticipated in such statements. Important factors that could cause actual results to differ materially from AXMIN's expectations are disclosed under the heading "Risk Factors" and elsewhere in AXMIN documents filed from time-to-time with the TSX Venture and other regulatory authorities. AXMIN disclaims any intention or obligation to update or revise any forward-looking statements whether as a result of new information, future events or otherwise, except as required by applicable law.

Neither TSX Venture Exchange nor its Regulation Services Provider (as that term is defined in the policies of the TSX Venture Exchange) accepts responsibility for the adequacy or accuracy of this release.

FOR FURTHER INFORMATION PLEASE CONTACT:
        AXMIN Inc.
        Mario Caron
        President & CEO
        416 368 0993 ext 223

        AXMIN Inc.
        Judy Webster
        Manager Investor Relations
        416 368 0993 ext 221
        ir@axmininc.com

Source: Axmin Inc.


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