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Micron (MU), Samsung Create Consortium Aimed at Innovating 'Hybrid Memory Cube'

October 6, 2011 3:02 PM EDT
Samsung Electronics Co., Ltd. and Micron Technology, Inc. (Nasdaq: MU) today announced the creation of a consortium for OEMs, enablers and integrators that will collaborate in developing and implementing an open interface specification for an innovative new memory technology called the Hybrid Memory Cube.

Micron and Samsung are the founding members of the Hybrid Memory Cube Consortium (HMCC), and will work closely with fellow developers Altera Corporation (Nasdaq: ALTR), Open Silicon, Inc., and Xilinx, Inc. (Nasdaq: XLNX) to collectively accelerate industry efforts in bringing to market a broad set of technologies. The consortium will initially define a specification to enable applications ranging from large-scale networking to industrial products and high-performance computing.

One of the primary challenges facing the industry — and a key motivation for forming the HMCC — is that the memory bandwidth required by high-performance computers and next-generation networking equipment has increased beyond what conventional memory architectures can provide. The term "memory wall" has been used to describe the problem. Breaking through the memory wall requires a new architecture that can provide increased density and bandwidth at significantly reduced power consumption.


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