MEMC Electronic Materials (WFR) Debuts New Advanced Silicon Wafer

July 6, 2012 8:05 AM EDT
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MEMC Electronic Materials, Inc. (NYSE: WFR) announced the introduction of MEMC FOX-Si, an innovative and cost-effective silicon wafer designed specifically for delivering advanced FinFET technology with oxide dielectric isolation (FOX).

A key approach for designing transistors below 32 nanometers is a "fin-based" multigate design, or FinFET, in which the conducting channel is wrapped by a thin silicon "fin" forming the body of the device. However, manufacturability challenges of conventional FinFETs on bulk silicon have complicated the implementation of this technology in high volume manufacturing, particularly for System-On-a-Chip devices, which are very demanding in power and cost. One of the major challenges of FinFETS is junction isolation and fin dimension control which increases variability and potentially compromises scalability. Oxide isolated FinFETS eliminate this problem completely. MEMC FOX-Si enables the FinFET manufacturer to produce a well-controlled fin height to deliver a consistent channel width allowing the user to reduce variability at the front-end of the process.

Utilizing MEMC's well-established Silicon-On-Insulator Technology, and its vertically integrated position, MEMC can offer MEMC FOX-Si wafers at competitive prices. In addition, MEMC's proprietary customization process enables customers to develop a product tailored to meet their specific needs. The method used to produce MEMC FOX-Si also transfers easily into high volume manufacturing.

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